WOCSDICE 2017

41st Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Las Palmas de Gran Canaria 21-24 May 2017.

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This workshop was organised by IUMA-ULPGC in order to help discuss advances and results obtained in AGATE project, together with other projects and research conducted in wide band compound semiconductors worldwide. It is an excellent forum for this discussion. WOCSDICE -now in its 41st edition- is one of the oldest workshops in this area. It features eight keynote speakers and 52 accepted papers from 19 countries including most European countries and US, Japan, or Russia. Full information on:

https://wocsdice2017.iuma.ulpgc.es/

The AGATE session features following presentations:

GaN Based Advanced substrates by Smart-CutTM for power devices
Raphaël Caulmiloné1, Yannick Baines2,3, François Levy2,3, Eric Guiot1, Tobias Mrotzek4
1 Soitec SA, Parc technologique des Fontaines, Bernin 38190, France
2 Univ. Grenoble Alpes, F-38000 Grenoble, France
3 CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
4 Plansee SE, 6600 Reutte, Austria

DC self-heating in GaN on Si MOS-HEMTs
R. Rodríguez, B. González, J. García, and A. Nunez
Institute for Applied Microelectronics (IUMA), ULPGC, Las Palmas de G.C., Spain

AGATE project was again presented at the European Nanoelectronics Forum. The event took place on 23 and 24 November 2016, in Rome, Italy. SOITEC showed a poster with general scope, objectives and main results of the project.

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Institute of High Pressure Physics Polish Academy of Sciences will participate in the 3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3). This event is organized at Tohoku University (Sendai, Japan) and is a unique workshop with invited participants limited to 50 scientists from Japan and abroad. AGATE results will be included in an invited lecture entitled HVPE as a method for crystallizing GaN with low background impurity concentration with controllable doping - highly conductive n-type and semi-insulating material. The lecture will be presented by Małgorzata Iwińska.

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AGATE results were presented at the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) held in Nagoya, Japan, on August 7-12, 2016 . Malgorzata Iwinska delivered a contributed talk titled Growth of HVPE-GaN on Advanced Substrates obtained by Smart CutTM.

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Before the conference (August 1-7) the 16th International Summer School on Crystal Growth (ISSCG-16) was organized in Lake Biwa, Shiga, Japan. The above mentioned results were presented during a poster session at the ISSCG-16. Malgorzata Iwinska received an Excellent Poster Award from the IUCr (International Union of Crystallography) as well as a Young Researchers Award. Congratulations!

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AGATE project results in Compound Semiconductor

Results of project AGATE were published in Compound Semiconductor Magazine. An article by IHPPS, titled Slashing the cost of GaN substrates can be found in the July issue. An invitation to prepare this article was a consequence of presenting the results at SPIE Photonics West 2016.

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